super fast recovery diode rf071l4s ? series ? dimensions (unit : mm) ? land size figure (unit : mm) standard fast recovery ? applications general rectification ? features ? structure 1)small power mold type.(pmds) 2)high switching speed 3)low forward voltage ? construction ? taping dimensions (unit : mm) silicon epitaxial planer ? absolute maximum ratings (tl=25 ? c) symbol v rm v r average rectified forward current io tj tstg ? electrical characteristics (tj=25 ? c) symbol unit i r a trr ns thermal resistance rth(j-l) ? c/w storage temperature ? 55 to ? 150 ? c a one cycle peak value, tj=25 ? c junction temperature 150 ? c forward current surge peak i fsm 60hz half sin wave, non-repetitive 15 glass epoxy substrate mounted tl=120 ? c 1a reverse voltage direct voltage 400 v repetitive peak reverse voltage d ? 0.5 400 v parameter conditions limits unit 25 junction to lead -- 23 -1 reverse recovery time i f =0.5a,i r =1a,irr=0.25i r -20 v f i f =0.7a v reverse current v r =400v - 0.01 10 forward voltage 1.25 min. typ. max. parameter conditions pmds 2.0 4.2 2.0 4.00.1 2.90.1 4.00.1 2.00.05 1.550.05 5.50.05 1.750.1 120.2 1.55 9.50.1 0.3 5.30.1 0.05 2.8max 1/3 2011.05 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rf071l4s ? electrical characteristics curves 0 5 10 15 20 25 30 c=200pf r=0 ? c=100pf r=1.5k ? ave : 3.40kv ave : 14.1kv 1 10 100 1000 110100 8.3ms ifsm 1cyc 8.3ms 1 10 100 110100 t ifsm 0 20 40 60 80 ave : 41.2a 8.3ms ifsm 1cyc 0.1 1 10 100 1000 0 100 200 300 400 tj=125 ? c tj=25 ? c tj=150 ? c tj=75 ? c 0.1 1 10 900 950 1000 1050 1100 1 10 100 0 5 10 15 20 25 30 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-l) 1ms im=10ma i f =100ma 300 ? s time on glass epoxi board forward voltage : v f (mv) v f -i f characteristics forward current : i f (a) reverse current : i r (na) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals : ct(pf) reverse voltage : v r (v) v r -ct characteristics v f dispersion map forward voltage : v f (mv) reverse current : i r (na) i r dispersion map capacitance between terminals : ct(pf) ct dispersion map i fsm disresion map peak surge forward current : i fsm (a) peak surge forward current : i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current : i fsm (a) time : t(ms) i fsm -t characteristics time : t(s) rth-t characteristics transient thaermal impedance : rth (c/w) trr dispersion map reverse recovery time : trr(ns) f=1mhz tj=25 ? c v r =400v n=30pcs ave : 4.2na electrostatic discharge test esd(kv) esd dispersion map 0.001 0.01 0.1 1 10 0 500 1000 1500 2000 tj=125 ? c tj=150 ? c tj=25 ? c tj=75 ? c ave : 980.8mv i f =0.7a tj=25 ? c n=30pcs 10 20 30 40 f=1mhz v r =0v tj=25 ? c ave : 29.2pf 0 5 10 15 20 25 30 i f =0.5a i r =1a irr=0.25*i r tj=25 ? c ave : 20.1ns 2/3 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf071l4s 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 306090120150 d=0.5 d=0.2 d=0.1 d=0.05 d.c. d=0.8 half sin wave ambient temperature : ta( ? c) derating curve"(io-ta) average rectified forward current : io(a) average rectified forward current : io(a) lead temparature : tl( ? c) derating curve"(io-tl) forward power dissipation : pf(w) average rectified forward current : io(a) io-pf characteristics t tj=150 ? c d=t/t t v r io v r =320v 0a 0v 0 0.2 0.4 0.6 0.8 1 1.2 0 0.3 0.6 0.9 1.2 1.5 1.8 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 306090120150 t tj=150 ? c d=t/t t v r io v r =320v 0a 0v d.c. d=0.8 d=0.05 d=0.1 d=0.2 half sin wave d=0.5 3/3 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
|
